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Mingates, T., Ghatas, M. E., Deuermeier, J., Kelly, A. G., Neilson, J., Coleman, J. N....Kiazadeh, A. (N/A). Sub-terahertz memristor switches using MoS2 by liquid–liquid interface assembly. Advanced Science. N/A

T. Mingates et al.,  "Sub-terahertz memristor switches using MoS2 by liquid–liquid interface assembly", in Advanced Science, vol. N/A, N/A

@article{mingatesN/A_1786549611338,
	author = "Mingates, T. and Ghatas, M. E. and Deuermeier, J. and Kelly, A. G. and Neilson, J. and Coleman, J. N. and Mendes, L. and Vaz, J. C. and Matos, S. and Lucci, L. and Clemente, A. and Sofer, Z. and Pessoa, L. M. and Fortunato, E. and Martins, R. and Kiazadeh, A.",
	title = "Sub-terahertz memristor switches using MoS2 by liquid–liquid interface assembly",
	journal = "Advanced Science",
	year = "N/A",
	volume = "N/A",
	number = "",
	doi = "10.1002/advs.75909",
	url = "https://advanced.onlinelibrary.wiley.com/journal/21983844"
}

TY  - JOUR
TI  - Sub-terahertz memristor switches using MoS2 by liquid–liquid interface assembly
T2  - Advanced Science
VL  - N/A
AU  - Mingates, T.
AU  - Ghatas, M. E.
AU  - Deuermeier, J.
AU  - Kelly, A. G.
AU  - Neilson, J.
AU  - Coleman, J. N.
AU  - Mendes, L.
AU  - Vaz, J. C.
AU  - Matos, S.
AU  - Lucci, L.
AU  - Clemente, A.
AU  - Sofer, Z.
AU  - Pessoa, L. M.
AU  - Fortunato, E.
AU  - Martins, R.
AU  - Kiazadeh, A.
PY  - N/A
SN  - 2198-3844
DO  - 10.1002/advs.75909
UR  - https://advanced.onlinelibrary.wiley.com/journal/21983844
AB  - This study demonstrates the first application-ready radio-frequency (RF) switches based on memristors fabricated via electrochemical exfoliation and liquid–liquid interfacial assembly. This 2D layer deposition method produces uniform, low-defect bilayer molybdenum disulfide (MoS2) nanosheet networks without the high temperatures or hazardous gases typical of chemical vapor deposition, providing a low-cost, environmentally friendly route toward CMOS-compatible integration. The resulting devices exhibit robust unipolar resistive switching, simplifying biasing and lowering power consumption compared to bipolar solutions. Devices show reproducibility with 104 s retention and 100-cycle endurance. RF characterization confirms reliable operation across 10–110 GHz with low insertion loss (0.42–0.9 dB), isolation above 18 dB, and an intrinsic cut-off frequency of ∼5.4 THz. The viability for integration into energy-efficient wireless communication platforms is assessed by simulation of a 24 × 24 elements reconfigurable intelligent surface. High gain (>21.6 dBi) and efficient beam steering (−60°–60°) across the 26.8–29.1 GHz band demonstrate the utility of these novel non-volatile RF switches in next-generation mmWave communication, including 5G/6G and satellite systems.
ER  -