Scientific journal paper Q1
Sub-terahertz memristor switches using MoS2 by liquid–liquid interface assembly
Tomás Mingates (Mingates, T.); Mohamed E. Ghatas (Ghatas, M. E.); Jonas Deuermeier (Deuermeier, J.); Adam G. Kelly (Kelly, A. G.); Joseph Neilson (Neilson, J.); Jonathan N. Coleman (Coleman, J. N.); Luís Mendes (Mendes, L.); João C. Vaz (Vaz, J. C.); Sérgio Matos (Matos, S.); Luca Lucci (Lucci, L.); Antonio Clemente (Clemente, A.); Zdeněk Sofer (Sofer, Z.); Luis Manuel Pessoa (Pessoa, L. M.); Elvira Fortunato (Fortunato, E.); Rodrigo Martins (Martins, R.); Asal Kiazadeh (Kiazadeh, A.); et al.
Journal Title
Advanced Science
Year (definitive publication)
N/A
Language
English
Country
United States of America
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Abstract
This study demonstrates the first application-ready radio-frequency (RF) switches based on memristors fabricated via electrochemical exfoliation and liquid–liquid interfacial assembly. This 2D layer deposition method produces uniform, low-defect bilayer molybdenum disulfide (MoS2) nanosheet networks without the high temperatures or hazardous gases typical of chemical vapor deposition, providing a low-cost, environmentally friendly route toward CMOS-compatible integration. The resulting devices exhibit robust unipolar resistive switching, simplifying biasing and lowering power consumption compared to bipolar solutions. Devices show reproducibility with 104 s retention and 100-cycle endurance. RF characterization confirms reliable operation across 10–110 GHz with low insertion loss (0.42–0.9 dB), isolation above 18 dB, and an intrinsic cut-off frequency of ∼5.4 THz. The viability for integration into energy-efficient wireless communication platforms is assessed by simulation of a 24 × 24 elements reconfigurable intelligent surface. High gain (>21.6 dBi) and efficient beam steering (−60°–60°) across the 26.8–29.1 GHz band demonstrate the utility of these novel non-volatile RF switches in next-generation mmWave communication, including 5G/6G and satellite systems.
Acknowledgements
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Keywords
2D materials,6G,Memristor,MoS2,Programmable metasurfaces,RF switches,Terahertz communications
  • Physical Sciences - Natural Sciences
  • Chemical Sciences - Natural Sciences
  • Biological Sciences - Natural Sciences
  • Other Natural Sciences - Natural Sciences
  • Civil Engineering - Engineering and Technology
  • Nano technology - Engineering and Technology
  • Chemical Engineering - Engineering and Technology
  • Materials Engineering - Engineering and Technology
  • Clinical Medicine - Medical and Health Sciences
  • Other Medical Sciences - Medical and Health Sciences
Funding Records
Funding Reference Funding Entity
10109710 Comissão Europeia
LA/P/0037/2020 Fundação para a Ciência e a Tecnologia
101107032 Comissão Europeia
CZ.02.1.01/0.0/0.0/15_003/0000444 EFRR
12/RC/2278_P2 Comissão Europeia
2024.04237.BD Fundação para a Ciência e a Tecnologia
UIDB/50025/2020 Fundação para a Ciência e a Tecnologia
UIDP/50025/2020 Fundação para a Ciência e a Tecnologia
UID/50008: Instituto de Telecomunicações Fundação para a Ciência e a Tecnologia

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